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The effect of changing the envelope was measured by using three simulators with one NIBP device. We developed a pressure measurement system (accuracy 0.048?mmHg) to measure the repeatability of simulators. QUCS SIMULATION SHARP TRANSITIONS TROUBLE SIMULATORThree different models of NIBP simulator and 18 different patient monitors with NIBP function were studied. To measure the repeatability and pressure pulse envelope of simulators used for testing oscillometric non-invasive blood pressure (NIBP) devices to study the effect of different envelopes on NIBP devices, and to measure the difference between NIBP devices due to different oscillometric algorithms. Sims, A J Reay, C A Bousfield, D R Menes, J A Murray, A Oscillometric blood pressure devices and simulators: measurements of repeatability and differences between models. The improved computational efficiency can enable pragmatic three-dimensional SHD device simulation as well, for which the SEB implementation would be straightforward as it is in FLOODS or any robust HD simulator. QUCS SIMULATION SHARP TRANSITIONS TROUBLE FULLRelative to full HD, SHD simulation times can be shorter by as much as an order of magnitude since larger voltage steps for DC sweeps and larger time steps for transient simulations can be used. The most noteworthy feature of the new SEB/SHD model is its computational efficiency, which results from reduced Newton iteration counts caused by the enhanced linearity. The SHD simulations yield detailed distributions of carrier temperature, carrier velocity, and impact-ionization rate, which agree well with the full HD simulation results obtained with FLOODS. The new SEB model was verified by comparison of two-dimensional SHD and full HD DC simulations of a submicron MOSFET. In the SEB model, the energy-relaxation length is estimated from a pre-process drift-diffusion simulation using the carrier-velocity distribution predicted throughout the device domain, and is used without change in a subsequent simpler hydrodynamic (SHD) simulation. To pragmatically account for non-local carrier heating and hot-carrier effects such as velocity overshoot and impact ionization in multi-dimensional numerical device simulation, a new simplified energy-balance (SEB) model is developed and implemented in FLOODS as a pragmatic option. ![]() ![]() Simplified energy-balance model for pragmatic multi-dimensional device simulation The performance of a number of Qucs-S modelling extensions are demonstrated with a GaN HEMT compact device model and data obtained from tests using the Qucs-S/Ngspice/Xyce ©/SPICE OPUS multi-engine circuit simulator. The multi- simulator version of Qucs is a freely available tool that offers extended modelling and simulation features compared to those provided by legacy circuit simulators. Particular importance is placed on the interaction between Qucs-S schematics, equation-defined devices, SPICE B behavioural sources and hardware description language (HDL) scripts. This article introduces a number of new features recently implemented in the 'Quite universal circuit simulator - SPICE variant' (Qucs-S), including structure and fundamental schematic capture algorithms, at the same time highlighting their use in behavioural semiconductor device modelling. QUCS SIMULATION SHARP TRANSITIONS TROUBLE SOFTWAREIn this paper, I discuss the capabilities of the EMMA code for the modeling and simulation of one such electromechanical device, a slim-loop ferroelectric (SFE) firing set.Įxtended behavioural device modelling and circuit simulation with Qucs-SĬurrent trends in circuit simulation suggest a growing interest in open source software that allows access to more than one simulation engine while simultaneously supporting schematic drawing tools, behavioural Verilog-A and XSPICE component modelling, and output data post-processing. The EMMA computer code is used to model such devices and simulate their operation. The high fidelity modeling and simulation of complicated electromechanical devices was not feasible prior to having the Accelerated Strategic Computing Initiative (ASCI) computers and the ASCI developed codes at Sandia National Laboratories (SNL). The modeling and simulation of such devices is a challenging problem since one has to represent the coupled physics of detonation, shock propagation, and electromagnetic field generation. Modeling and Simulation of Explosively Driven Electromechanical DevicesĬomponents that store electrical energy in ferroelectric materials and produce currents when their permittivity is explosively reduced are used in a variety of applications. ![]()
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